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Silicene: A functional material for future electronics?

发布日期:2016年10月14日
物理学院“博约学术论坛”系列报告
第88期     (2016年第15期)

Title:Silicene: A functional material for future electronics?
报告人:Udo Schwingenschl?gl 教授(沙特阿卜杜拉国王科技大学)
时   间:10月17日(周一)下午14:30
地   点:中心教学楼610
ABSTRACT
Silicene is the Si analogue of graphene with the same honeycomb structure and linear dispersions of the π and π* bands at the K point of the Brillouin zone. It is predicted to realize a buckled structure, due to sp2-sp3 hybridization, and is compatible with  current Si-based nano-electronics. Silicene yet has not been achieved by mechanical exfoliation, because of the sp3 bonding, but can be deposited on metallic substrates such as Ag(111), Ir(111), and ZrB2(0001). Regrettably, strong interaction to these substrates destroys the Dirac physics. For this reason, semiconducting substrates including Si(111) and SiC(0001) have been explored theoretically whether they lead to a Dirac cone with reasonable band gap (which is essential for applications). However, surface passivation is inevitable for these and similar substrates, due to their dangling bonds. Layered materials such as MgBr2(0001), MoX2, and GaX2 (X = S, Se, and Te), on the other hand, preserve the characteristic electronic states of silicene and additionally simplify the preparation procedure as passivation is not required. The predicted effects of different substrates on silicene will be compared and evaluated with respect to technological requirements.
Curriculum Vitae
Udo Schwingenschl?gl is a Professor of Materials Science & Engineering at King Abdullah University of Science and Technology (KAUST), Saudi Arabia. He previously worked at the International Center of Condensed Matter Physics in Brasilia, Brazil, and the University of Augsburg, Germany. His research interests in condensed matter physics and first-principles materials modeling focus on 2D materials, interface and defect physics, correlated materials, thermoelectric materials, metal-ion batteries, nanoparticles, and quantum transport.
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